Low-temperature growth of InN on Si(100) by femtosecond pulsed laser deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 4, 2009, Pages 696-699

  Hafez, M A ^a   Elsayed Ali, H E ^a  

^a Old Dominion University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC NITROGEN; CRYSTAL QUALITIES; FEMTOSECOND PULSED-LASER DEPOSITION; HIGH QUALITY; INN FILMS; INTERMEDIATE LAYERS; LASER INDUCED BREAKDOWN; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; SI SUBSTRATES; SI(1 0 0);

ATOMIC FORCE MICROSCOPY; ATOMS; BUFFER LAYERS; DIFFRACTION; INDIUM; LASERS; PULSED LASER DEPOSITION;

SILICON;

EID: 67650305946     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3151819     Document Type: Article

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