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Volumn 311, Issue 7, 2009, Pages 2058-2062

InN films and nanostructures grown on Si (1 1 1) by RF-MBE

Author keywords

A1. High resolution X ray diffraction; A1. Interfaces; A1. Nanostructures; A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

BUFFER LAYERS; CRYSTAL GROWTH; DIFFRACTION; ELECTRON MOBILITY; ELECTRONS; EMISSION SPECTROSCOPY; FIELD EMISSION; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SULFUR COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EID: 63349110324     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.12.012     Document Type: Article
Times cited : (23)

References (27)
  • 20
    • 1042266091 scopus 로고    scopus 로고
    • A. Krost, A. Dadgar, Proceedings of 12th International Conference on Semiconducting & Insulating Materials, IEEE 2002, p. 41.
    • A. Krost, A. Dadgar, Proceedings of 12th International Conference on Semiconducting & Insulating Materials, IEEE 2002, p. 41.
  • 22
    • 63349106988 scopus 로고    scopus 로고
    • Personal Communication
    • Ph. Komninou, Personal Communication.
    • Komninou, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.