Terahertz emission from silicon and magnesium doped indium nitride

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Wilke, Ingrid ^a   Ascazubi, Ricardo ^a   Lu, Hai ^b   Schaff, William J ^b  

^a Research Rensselaer Polytechnic Institute   (United States)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTROMAGNETIC WAVES; ELECTRON OPTICS; EXPERIMENTS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; MAGNESIUM; MAGNESIUM PRINTING PLATES; NITRIDES; SILICON;

ELECTROMAGNETIC RADIATIONS; ELECTRON CONCENTRATIONS; EXPERIMENTAL EVIDENCES; EXPERIMENTAL STUDIES; INDIUM NITRIDES; MAGNESIUM DOPED; TERAHERTZ EMISSIONS; TERAHERTZ FREQUENCIES; TRANSIENT PHOTOCURRENTS;

MAGNETIC FIELD EFFECTS;

EID: 57349165832     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3043450     Document Type: Article

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