In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2776-2779

  Suzuki, Akira ^a   Bungi, Yu ^a   Araki, Tsutomu ^a   Nanishi, Yasushi ^a   Mori, Yasuaki ^b   Yamamoto, Hiroaki ^c   Harima, Hiroshi ^c  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b EpiQuest Inc   (Japan)

^c KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A1. Crystal structure; A1. Raman spectroscopy; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

A1. CRYSTAL STRUCTURE; A1. RAMAN SPECTROSCOPY; A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS;

ANNEALING; CRYSTAL GROWTH; DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OXIDE MINERALS; QUARTZ; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

CRYSTAL STRUCTURE;

EID: 65749092703     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.006     Document Type: Article

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