Highly conductive p-type silicon carbon alloys deposited by hot-wire chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 1, 2010, Pages 0413031-0413036

  Chen, Tao ^a,b   Yang, Deren ^a   Carius, Reinhard ^b   Finger, Friedhelm ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; AL-DOPING; CARBON PHASIS; CRYSTALLINITIES; DEPOSITION PRESSURES; FREE CARRIERS; HOT WIRE CHEMICAL VAPOR DEPOSITION; INFRARED AND RAMAN SPECTROSCOPY; MONOMETHYLSILANE; P-TYPE; P-TYPE SILICON; PHOTON ENERGY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; SILICON-BASED THIN FILMS; STRUCTURAL COMPOSITION; TRIMETHYLALUMINUM; WINDOW LAYER;

ABSORPTION; ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DOPING (ADDITIVES); INFRARED SPECTROSCOPY; MICROCRYSTALLINE SILICON; OPTICAL PROPERTIES; PHOTONS; RAMAN SPECTROSCOPY; SILICON ALLOYS; SILICON CARBIDE; SOLAR POWER GENERATION; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952617433     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.041303     Document Type: Article

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