Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3513-3515

  Chen, Tao ^a,b   Huang, Yuelong ^a   Wang, Haiyan ^a   Yang, Deren ^b   Dasgupta, Arup ^a   Carius, Reinhard ^a   Finger, Friedhelm ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Catalytic CVD; Hot wire deposition; Microcrystalline silicon carbide; Thin film solar cells

Indexed keywords

ABSORBER LAYERS; BACK REFLECTORS; CATALYTIC CVD; CELL EFFICIENCIES; FILAMENT TEMPERATURES; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; HOT-WIRE DEPOSITION; MICROCRYSTALLINE SILICON SOLAR CELLS; P TYPES; THIN FILM SOLAR CELLS; WINDOW LAYERS;

CHEMICAL VAPOR DEPOSITION; FILAMENTS (LAMP); MICROCRYSTALLINE SILICON; NONMETALS; OPTICAL PROPERTIES; PHOTOVOLTAIC CELLS; RHENIUM; SILICON CARBIDE; SILVER; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS; WINDOWS; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64649090130     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.029     Document Type: Article

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