Low-temperature deposition of highly conductive n-type hydrogenated nanocrystalline cubic SiC films for solar cell applications

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 12-16, 2006, Pages

  Miyajima, Shinsuke ^a   Haga, Keisuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

HWCVD; Low temperature deposition; Silicon carbide; Solar cell

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; FABRICATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; SOLAR CELLS;

CONVERSION EFFICIENCY; DARK CONDUCTIVITY; HOT-WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); LOW-TEMPERATURE DEPOSITION;

SILICON CARBIDE;

EID: 33646492531     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L432     Document Type: Article

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