Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3507-3512

  Finger, F ^a   Astakhov, O ^a   Bronger, T ^a   Carius, R ^a   Chen, T ^a   Dasgupta, A ^a   Gordijn, A ^a   Houben, L ^a   Huang, Y ^a   Klein, S ^a   Luysberg, M ^a   Wang, H ^a   Xiao, L ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Catalytic CVD; Hot wire CVD; SiC alloys; Thin film solar cells

Indexed keywords

CATALYTIC CVD; CELL CONVERSION EFFICIENCIES; CRYSTALLINE SILICONS; DEPOSITION PARAMETERS; DEPOSITION TEMPERATURES; HIGH POTENTIALS; HIGH TRANSPARENCIES; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; HOT-WIRE CVD; LOW-TEMPERATURE DEPOSITIONS; MICROCRYSTALLINE SILICON SOLAR CELLS; MONOMETHYLSILANE; SHORT-CIRCUIT CURRENT DENSITIES; SIC ALLOYS; THIN FILM SOLAR CELLS; THIN-FILM; TRANSPARENT CONDUCTIVE; UNINTENTIONAL DOPING; WINDOW LAYERS;

CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; FILM PREPARATION; HYDROGEN; MICROCRYSTALLINE SILICON; OPTICAL PROPERTIES; PHOTOVOLTAIC CELLS; SILICON ALLOYS; SILICON CARBIDE; SILICON SOLAR CELLS; SOLAR CELLS; SWITCHING CIRCUITS; THIN FILM DEVICES; THIN FILMS; WINDOWS; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64649091410     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.115     Document Type: Article

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