Effect of filament and substrate temperatures on the structural and electrical properties of SiC thin films grown by the HWCVD technique

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 622-625

  Dasgupta, A ^a   Huang, Y ^a   Houben, L ^a   Klein, S ^a   Finger, F ^a   Carius, R ^a   Luysberg, M ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Electron microscopy; Hot wire deposition; Microstructure; Raman spectroscopy; Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON MICROSCOPY; MICROSTRUCTURE; RAMAN SPECTROSCOPY; SILICON CARBIDE;

HOT-WIRE DEPOSITION; SUBSTRATE TEMPERATURES;

THIN FILMS;

EID: 36749060765     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.077     Document Type: Article

References (9)

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