Highly conductive hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD at A low substrate temperature on glass substrates

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 1504-1507

  Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; FABRICATION; GLASS; HETEROJUNCTIONS; HYDROGENATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON CARBIDE; SILICON SOLAR CELLS; SUBSTRATES;

CRYSTALLINE SILICON; HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); PHOSPHINE;

THIN FILMS;

EID: 27944493646     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S.Miyajima, A.Yamada and M.Konagai, "Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature", Jpn.J.Appl.Phys. 43, 2004, pp.L1190-L1192.
2. Shinsuke Miyajima, Akira Yamada and Makoto Konagai, "Low Temperature (320oC) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films", Materials Science Forum 457-460 (2004) 317
3. T.Watahiki, S.Miyajima, Y.Yoneyama, A.Yamada and M.Konagai, "Electrical Properties of Doped Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films", Technical Digest of the International PVSEC-14, 2004, pp.383-384
4. Edited by G.L. Harris, "Properties of Silicon Carbide", INSPEC, Institution of Electrical Engineers, London, 1995.