Characterization of undoped, N- and P-type hydrogenated nanocrystalline silicon carbide films deposited by hot-wire chemical vapor deposition at low temperatures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 A, 2007, Pages 1415-1426

  Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

HWCVD; Low temperature deposition; Nanocrystalline material; Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SILICON CARBIDE; THERMAL EFFECTS; X RAY DIFFRACTION;

HWCVD; LOW-TEMPERATURE DEPOSITION; NANOCRYSTALLINE MATERIAL; SILICON SUBSTRATES;

NANOCRYSTALLINE SILICON;

EID: 34547841880     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1415     Document Type: Article

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