Highly transparent microcrystalline silicon carbide grown with hot wire chemical vapor deposition as window layers in n-i-p microcrystalline silicon solar cells

Applied Physics Letters

Volumn 90, Issue 20, 2007, Pages

  Huang, Y ^a   Dasgupta, A ^a,b   Gordijn, A ^a   Finger, F ^a   Carius, R ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ENERGY GAP; MICROCRYSTALLINE SILICON; QUANTUM EFFICIENCY; SILICON SOLAR CELLS; THIN FILMS;

HOLE DRIFT MOBILITY; SHORT CIRCUIT CURRENT DENSITY (JSC); SUBSTRATE TEMPERATURE;

SILICON CARBIDE;

EID: 34249069559     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2739335     Document Type: Article

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