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Journal of Physics Condensed Matter

Volumn 13, Issue 40, 2001, Pages 8939-8944

Temperature-dependent hole transport in GaN

(2) Lancefield, D a Eshghi, H b

a UNIVERSITY OF SURREY (United Kingdom)

b Shahroud University (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; HALL EFFECT; MAGNESIUM PRINTING PLATES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCATTERING; TEMPERATURE; TRANSPORT PROPERTIES;

HALL CARRIER DENSITY; RELAXATION TIME APPROXIMATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035828775 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/40/308 Document Type: Article

Times cited : (26)

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