Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Muth, J F ^b   Brown, J D ^a   Johnson, M A L ^a   Yu, Zhonghai ^a   Kolbas, R M ^b   Cook Jr , J W ^a   Schetzina, J F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MORPHOLOGY; SILICA;

DISLOCATION DENSITY; GROWTH TEMPERATURES;

SEMICONDUCTING FILMS;

EID: 3442877940     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002957     Document Type: Conference Paper

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