Self-assembled growth and luminescence of crystalline Si/SiOx core-shell nanowires

Nanotechnology

Volumn 21, Issue 20, 2010, Pages

  Kim, S ^a   Kim, C O ^a   Shin, D H ^a   Hong, S H ^a   Kim, M C ^a   Kim, J ^a   Choi, S H ^a   Kim, T ^b   Elliman, R G ^b   Kim, Y M ^c  

^a Kyung Hee University   (South Korea)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

[A] GROWTH MODELS; AVERAGE DIAMETER; CORE-SHELL NANOWIRES; CORE/SHELL; CORE/SHELL STRUCTURE; DEFECT STATE; EMISSION BANDS; GROWTH PROCESS; PHOTOLUMINESCENCE SPECTRUM; PL BANDS; SELF-ASSEMBLED; SELF-ASSEMBLED GROWTH; SHELL INTERFACE; SI CONCENTRATION; SILICON CONCENTRATION; UV- AND; VAPOR-LIQUID-SOLID MECHANISM;

CRYSTALLINE MATERIALS; DEPOSITION; NANOWIRES; PLASMA DEPOSITION; SILICON; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

METAL NANOPARTICLE; NANOMATERIAL; NANOWIRE; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; DIFFUSION; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; POWDER; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

CRYSTALLIZATION; DIFFUSION; LIGHT; LUMINESCENCE; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOWIRES; POWDERS; SILICON; TEMPERATURE; ULTRAVIOLET RAYS;

EID: 77951576414     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/20/205601     Document Type: Article

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