On the morphological instability of silicon/silicon dioxide nanowires (Applied Physics A: Materials Science and Processing (2005) 80 (1405-1408) DOI:10.1007/s00339-004-3188-7);On the morphological instability of silicon/silicon dioxide nanowires

Applied Physics A: Materials Science and Processing

Volumn 80, Issue 7, 2005, Pages 1405-1408

  Kolb, F M ^a   Hofmeister, H ^a   Zacharias, M ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; EVAPORATION; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON WAFERS; SUBSTRATES; THERMOANALYSIS;

MORPHOLOGICAL INSTABILITY; RAYLEIGH INSTABILITIES; SILICON DIOXIDE NANOWIRES; THERMAL EVAPORATION;

NANOSTRUCTURED MATERIALS;

EID: 18544387616     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4801-y     Document Type: Erratum

References (13)

1. F.M. Kolb, H. Hofmeister, R. Scholz, M. Zacharias, U. Gösele, D.D. Ma, S.-T. Lee: J. Electrochem. Soc. 151, G472 (2004)
2. S.-T. Lee, N. Wang, Y.F. Zhang, Y.H. Tang: MRS Bull. 24, 36 (1999)
3. R.S. Wagner, W.C. Ellis: Appl. Phys. Lett. 4, 89 (1964)
4. J.A.F. Plateau: Statique Expérimentale et Théorique des Liquides Soumis aux Seules Forces Moleculaires (Gauthier-Villars, Paris 1873)
5. Lord Rayleigh: Proc. London Math. Soc. 10, 4 (1878)
6. E.I. Givargizov: J. Crystal Growth 20, 217 (1973)
7. S.Q. Feng, D.P. Yu, H.Z. Zhang, Z.G. Bai, Y. Ding: J. Crystal Growth 209, 513 (2000)
8. H. Kohno, S. Takeda: J. Crystal Growth 216, 185 (2000)
9. H.Y. Peng, N. Wang, W.S. Shi, Y.F. Zhang, C.S. Lee, S.-T. Lee: J. Appl. Phys. 89, 727 (2001)
10. F.A. Nichols, W.W. Mullins: Trans. Met. Soc. AIME 233, 1840 (1965)
11. C. Herring: J. Appl. Phys. 21, 301 (1950)
12. B.E. Deal, A.S. Grove: J. Appl. Phys. 36, 3770 (1965)
13. T. Müller, K.-H. Heinig, B. Schmidt: Mat. Sci. Eng. C 19, 209 (2002)