Growth mechanism and optical properties of semiconducting Mg2Si thin films

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 237-242

  Vantomme, A ^a   Langouche, G ^a   Mahan, J E ^b   Becker, J P ^b  

^a KU LEUVEN   (Belgium)

^b Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DEPOSITION; ENERGY GAP; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS;

SEMICONDUCTING SILICIDES;

SEMICONDUCTING FILMS;

EID: 0033640328     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00287-7     Document Type: Article

References (9)

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