Surface electronic structure of pure and oxidized non-epitaxial Mg2Si layers on Si(111)

Surface Science

Volumn 398, Issue 1-2, 1998, Pages 184-194

  Brause, M ^a   Braun, B ^a   Ochs, D ^a   Maus Friedrichs, W ^a   Kempter, V ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Electronic structure; Insulating film; Magnesium silicide; Metastable impact electron spectroscopy; Oxidation; Photoelectron spectroscopy

Indexed keywords

ELECTRON EMISSION; ELECTRON SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ELECTRONIC STRUCTURE; FERMI LEVEL; FILM GROWTH; INSULATING MATERIALS; MAGNESIUM COMPOUNDS; OXIDATION; SEMICONDUCTING FILMS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

MAGNESIUM SILICIDE; METASTABLE IMPACT ELECTRON SPECTROSCOPY;

SILICON;

EID: 0032000563     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)80022-8     Document Type: Article

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