Growth of pinhole-free ytterbium silicide film by solid-state reaction on Si(001) with a thin amorphous Si interlayer

Journal of Applied Physics

Volumn 102, Issue 3, 2007, Pages

  Jiang, Yu Long ^a,c   Xie, Qi ^a   Detavernier, Christophe ^b   Van Meirhaeghe, R L ^b   Ru, Guo Ping ^a   Qu, Xin Ping ^a   Li, Bing Zong ^a   Chu, Paul K ^c  

^a FUDAN UNIVERSITY   (China)

^b GHENT UNIVERSITY   (Belgium)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS FILMS; REACTION KINETICS; SILICON COMPOUNDS; THIN FILMS; X RAY DIFFRACTION;

GROWTH MECHANISM; PINHOLE FREE FILMS; SILICIDATION;

YTTERBIUM COMPOUNDS;

EID: 34548050002     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767375     Document Type: Article

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