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Journal of Electron Spectroscopy and Related Phenomena

Volumn 134, Issue 1, 2004, Pages 81-85

The effect of heating on InGaAs/InP(1 0 0) and InPO4/InP(1 0 0)

(7) Ghaffour, M a Bouslama, M b Lounis, Z b Nouri, A b Jardin, C c Monteil, Y c Dumont, H c

a UNIVERSITY OF MOSTAGANEM (Algeria)

b NATIONAL POLYTECHNIC SCHOOL OF ORAN (Algeria)

c UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

Author keywords

Auger; EELS; InGaAs; InP; InPO4; Thermal stability

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; COMPOSITION; DECOMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; GROWTH (MATERIALS); ION BOMBARDMENT; KINETIC ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SCHOTTKY BARRIER DIODES; SPECTRUM ANALYSIS; STOICHIOMETRY; THERMAL EFFECTS; THICKNESS MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

EPITAXIAL FILMS; SCHOTTKY BARRIER HEIGHT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0348223654 PISSN: 03682048 EISSN: None Source Type: Journal
DOI: 10.1016/j.elspec.2003.10.001 Document Type: Article

Times cited : (3)

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