Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films

Materials Science in Semiconductor Processing

Volumn 11, Issue 4, 2008, Pages 122-125

  Chang, Sung Yong ^a   Jeong, Myeong Il ^b   Jagadeesh Chandra, S V ^b   Lee, Yong Boo ^c   Hong, Hyo Bong ^d   Rajagopal Reddy, V ^e   Choi, Chel Jong ^b  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

^b Chonbuk National University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

^d Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^e SRI VENKATESWARA UNIVERSITY   (India)

Author keywords

EOT; Er silicate; High k; Interface trap density; Interfacial reaction

Indexed keywords

EOT; ER-SILICATE; HIGH-K; INTERFACE TRAP DENSITY; INTERFACIAL REACTION;

CHEMICAL BONDS; DANGLING BONDS; GATE DIELECTRICS; GATES (TRANSISTOR); HEAT TREATMENT; SILICATES; SILICON; THERMODYNAMIC STABILITY;

ERBIUM;

EID: 67650544390     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.06.001     Document Type: Article

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