Effect of γ-radiation on HfO2 based MOS capacitor

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 9, 2010, Pages 1482-1485

  Ergin, F Belgin ^a   Turan, Raşit ^b   Shishiyanu, Sergiu T ^b   Yilmaz, Ercan ^a  

^a ABANT IZZET BAYSAL UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Alternative dielectric film; MOS capacitor; Oxide trapped; Radiation effects

Indexed keywords

ALTERNATIVE DIELECTRIC FILM; ALTERNATIVE DIELECTRICS; EXPOSURE-TIME; FLAT-BAND VOLTAGE SHIFT; GAMMA RADIATION; GAMMA SOURCE; GATE INSULATOR; HIGH-K DIELECTRIC MATERIALS; LOW DOSE; LOW-GAMMA; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MICROELECTRONIC APPLICATIONS; NEW RESULTS; SILICON-BASED;

CAPACITANCE; CAPACITORS; DIELECTRIC FILMS; GAMMA RAYS; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MICROELECTRONICS; MOS CAPACITORS; SEMICONDUCTING SILICON;

RADIATION EFFECTS;

EID: 77950862466     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.01.027     Document Type: Article

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