Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 22, 2008, Pages 4896-4898

  Yilmaz, Ercan ^a   Doǧan, Ilker ^b   Turan, Raşit ^b  

^a ABANT IZZET BAYSAL UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Dielectrics; Dosimeters; MOS capacitor; MOS devices; Radiation effects; Radiation sensor

Indexed keywords

ALUMINUM; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC EQUIPMENT; GAMMA RAYS; MOS DEVICES; RADIATION; RADIATION EFFECTS; RADIATION SHIELDING; SEMICONDUCTING SILICON; SENSOR NETWORKS; SENSORS; SILICON; SILICON COMPOUNDS;

DIELECTRICS; GREAT-ER; RADIATION SENSOR; RADIATION SENSORS; SI SUBSTRATES; TRAPPING EFFICIENCIES; V CURVES; VALANCE BANDS;

MOS CAPACITORS;

EID: 54549106593     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.07.028     Document Type: Article

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