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Volumn 264, Issue 2, 2007, Pages 287-292

A systematic study on MOS type radiation sensors

Author keywords

Dosimeters; MOS capacitor; MOS devices; Radiation effects; Radiation sensor

Indexed keywords

ANNEALING; DOSIMETERS; GAMMA RAYS; MICROELECTRONICS; RADIATION EFFECTS; SENSITIVITY ANALYSIS; THICKNESS MEASUREMENT;

EID: 36048987799     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.08.081     Document Type: Article
Times cited : (25)

References (25)
  • 3
    • 11844255386 scopus 로고    scopus 로고
    • A. Arshak, K. Arshak, O. Korostynska, S. Zleetni, in: Nuclear Science Symposium Conference Record, IEEE Trans. Nucl. Sci., Vol. 1, 19-25 October 2003, p. 78.
  • 12
    • 36348978107 scopus 로고    scopus 로고
    • E. Yilmaz, R. Turan, Temperature cycling of MOS-based radiation sensors, Sens. Actuators A: Phys., in press (2007), doi:10.1016/j.sna.2007.07.001.
  • 15
    • 36048971327 scopus 로고    scopus 로고
    • A. Jaksic, G. Ristic, M. Pejovic, A. Mohhamadzadeh, C. Sudre, W. Line, in: Proceedings of the 23rd International Conference on Microelectronics 2 (MIEL 2002), Nis, Yugoslavia.
  • 25
    • 36048942966 scopus 로고    scopus 로고
    • P. U. Kenkare, "Charge Transport and Interface State Generation in Irradiated Silicon-Silicon Dioxide Structures", Thesis (Ph.D.), Princeton University, 1990, Source: Dissertation Abstracts International B 51(5) 2530.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.