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Japanese Journal of Applied Physics

Volumn 49, Issue 2 Part 1, 2010, Pages

Performance of zero-Schottky-barrier and doped contacts single and double walled carbon nanotube transistors

(2) Wahab, Md Abdul a Alam, Khairul b

a UNITED INTERNATIONAL UNIVERSITY (Bangladesh)

b EAST WEST UNIVERSITY (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CURRENT GAINS; DOUBLE WALLED CARBON NANOTUBES; DOUBLE-WALLED; GATE BIAS; GATE CAPACITANCE; GATE REGION; GATE VOLTAGES; IV CHARACTERISTICS; QUANTUM SIMULATIONS; SCHOTTKY BARRIERS; SINGLE-WALLED; STATE PERFORMANCE; SWITCHING DELAY; SWITCHING PERFORMANCE;

CARBON NANOTUBES; DIELECTRIC WAVEGUIDES; ELECTRON MOBILITY; QUANTUM CHEMISTRY; SINGLE-WALLED CARBON NANOTUBES (SWCN);

FIELD EFFECT TRANSISTORS;

EID: 77950830261 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.025101 Document Type: Article

Times cited : (1)

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