Adsorption-induced conversion of the carbon nanotube field effect transistor from ambipolar to unipolar behavior

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Kang, Donghun ^a   Park, Noejung ^a   Hyun, Jaewoong ^a   Bae, Eunju ^a   Ko, Juhye ^a   Kim, Jujin ^a,b   Park, Wanjun ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRIC FIELD EFFECTS; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRONIC EQUIPMENT; ELECTROSTATICS; FERMI LEVEL; LIGHT ABSORPTION; PROBABILITY DENSITY FUNCTION; SPIN COATING;

GENERALIZED GRADIENT APPROXIMATION (GGA); MOLECULAR ADSORPTION; MOLECULAR ORBITAL; UNIPOLAR TRANSITION;

FIELD EFFECT TRANSISTORS;

EID: 17044438716     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1869548     Document Type: Article

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21. Because the highest occupied molecular level (HOMO)-LUMO gap in the DFT is not so rigorous, we performed TDDFT calculations for H2O using Gaussian package [Gaussian 03, Revision B.01, Gaussian, Inc., Pittsburgh, PA, 2003]. The HOMO-LUMO gap of H2O is found to be 6.4 and 7.5 eV in DFT and TDDFT, respectively. Thus, the DFT artifact would not affect our model discussed here.