Double-wall carbon nanotube field-effect transistors: Ambipolar transport characteristics

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2412-2414

  Shimada, Takashi ^a   Sugai, Toshiki ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a   Yoshida, Hiromichi ^a   Okazaki, Toshiya ^a   Shinohara, Hisanori ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRODES; ELECTRON TRANSITIONS; ELECTRONIC STRUCTURE; ENERGY GAP; MATHEMATICAL MODELS; RAMAN SPECTROSCOPY;

DOUBLE-WALL CARBON NANOTUBES (DWNT); ELECTRONIC TRANSPORT; MIOCROGRAPHS; THERMAL OXIDATION;

FIELD EFFECT TRANSISTORS;

EID: 2142758721     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1689404     Document Type: Article

References (17)

1. T. Sugai, H. Yoshida, T. Shimada, T. Okazaki, S. Bandow, and H. Shinohara, Nano Lett. 3, 769 (2003).
2. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
3. R. Martel, T. Schmidt, H. R. Shea, T. Hertel, and Ph. Avouris, Appl. Phys. Lett. 73, 2447 (1998).
4. P. G. Collins, M. S. Arnold, and Ph. Avouris, Science 292, 706 (2001).
5. A. Javey, M. Shim, and H. Dai, Appl. Phys. Lett. 80, 1064 (2002).
6. T. Sugai, H. Omote, and H. Shinohara, Eur. Phys. J. D 9, 369 (1999).
7. T. Sugai, H. Omote, S. Bandow, N. Tanaka, and H. Shinohara, Jpn. J. Appl. Phys., Part 2 38, L477 (1999).
8. T. Sugai, H. Omote, S. Bandow, N. Tanaka, and H. Shinohara, J. Chem. Phys. 112, 6000 (2000).
9. A. Jorio, R. Saito, J. H. Hafner, C.-M. Lieber, M. Hunter, T. MCClure, G. Dresselhaus, and M. S. Dresselhaus, Phys. Rev. Lett. 86, 1118 (2001).
10. T. Shimada, T. Okazaki, R. Taniguchi, T. Sugai, H. Shinohara, K. Suenaga, Y. Ohno, S. Mizuno, S. Kishimoto, and T. Mizutani, Appl. Phys. Lett. 81, 4067 (2002).
11. T. Okazaki, T. Shimada, K. Suenaga, Y. Ohno, T. Mizutani, J. Lee, Y. Kuk, and H. Shinohara, Appl. Phys. A: Mater. Sci. Process. 76, 475 (2003).
12. R. Saito, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Appl. Phys. Lett. 60, 2204 (1992).
13. J. W. G. Wilöder, L. C. Venema, A. G. Rinzler, R. E. Smalley, and C. Dekker, Nature (London) 391, 59 (1998).
14. T. W. Odom, J.-L. Huang, P. Kim, and C. M. Lieber, Nature (London) 391, 62 (1998).
15. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, Nano Lett. 3, 193 (2003).
16. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
17. Y. Taur and T. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998).