Nonsaturating drain current characteristic in short-channel amorphous-silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 846-854

  Wie, Chu Ryang ^a  

^a State University of New York ^*  (United States)

Author keywords

Amorphous Si thin film transistor; Bias temperature stress; Channel length modulation; Kink effect; Self heating effect; Split channel TFT

Indexed keywords

AMORPHOUS SI; AMORPHOUS SI THIN FILM TRANSISTOR; BIAS TEMPERATURE STRESS; CHANNEL-LENGTH MODULATION; KINK EFFECT; SELF-HEATING EFFECT;

AMORPHOUS FILMS; AMORPHOUS SILICON; DRAIN CURRENT; HEATING; MODULATION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77950295967     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2040935     Document Type: Article

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