Nonuniform threshold voltage profile in a -Si:H thin film transistor stressed under both gate and drain biases

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Wie, C R ^a   Tang, Z ^a   Park, M S ^b  

^a State University of New York ^*  (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRODES; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SPICE; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

BIAS TEMPERATURES; DRAIN BIASES; FERMI POTENTIALS; GATE BIASES; MEASURED DATUMS; NON UNIFORMS; NONUNIFORM CHANNELS; OUTPUT CHARACTERISTICS; SEMI-CONDUCTORS; SI:H THIN FILM TRANSISTORS; SOURCE AND DRAIN ELECTRODES; SPICE SIMULATIONS;

TRANSISTORS;

EID: 58149262847     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033527     Document Type: Article

References (17)

1. K. S. Karim, A. Nathan, M. Hack, and W. I. Milne, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.825154 25, 188 (2004).
2. R. Shringarpure, S. Venugopal, L. T. Clark, D. R. Allee, and E. Bawolek, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2007.911609 29, 93 (2008).
3. Y. Kaneko, A. Sasano, and T. Tsukada, J. Appl. Phys. 0021-8979 10.1063/1.347577 69, 7301 (1991).
4. K. N. Quader, C. C. Li, R. Tu, E. Rosenbaum, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices 0018-9383 10.1109/16.249472 40, 2245 (1993).
5. M. J. Powell, C. van Berkel, and J. R. Huges, Appl. Phys. Lett. 0003-6951 10.1063/1.100704 54, 1323 (1989).
6. M. J. Powell and S. C. Deane, Phys. Rev. B 0163-1829 10.1103/PhysRevB.53. 10121 53, 10121 (1996).
7. Y. Okumura, M. Shirahata, A. Hachisuka, T. Okudaira, H. Arima, and T. Matsukawa, IEEE Trans. Electron Devices 39, 2541 (1992). 0018-9383
8. J. Victory, J. Sanchez, T. DeMassa, and B. Welfert, Solid-State Electron. 38, 1497 (1995). 0038-1101
9. C. -L. Wang, Solid-State Electron. 38, 1423 (1995). 0038-1101
10. S. H. Jin, M. S. Park, J. I. Kim, D. G. Kim, and N. D. Kim, SID DIGEST, 2007, pp. 268-271.
11. M. J. Powell, C. van Berkel, I. D. French, and D. H. Nicholls, Appl. Phys. Lett. 0003-6951 10.1063/1.98692 51, 1242 (1987).
12. K. Winer, Phys. Rev. B 0163-1829 10.1103/PhysRevB.41.12150 41, 12150 (1990).
13. M. J. Powell and S. C. Deane, Phys. Rev. B 0163-1829 10.1103/PhysRevB.48. 10815 48, 10815 (1993).
14. G. Schumm and G. H. Bauer, J. Non-Cryst. Solids 0022-3093 10.1016/S0022-3093(05)80202-9 137&138, 315 (1991).
15. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998), pp. 118-125.
16. A. Cerdeira, M. Estrada, R. Garcia, A. Ortiz-Conde, and F. J. G. Sanchez, Solid-State Electron. 0038-1101 10.1016/S0038-1101(01)00143-5 45, 1077 (2001).
17. M. Shur and M. Hack, J. Appl. Phys. 0021-8979 10.1063/1.332893 55, 3831 (1984).