SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 B, 2006, Pages 4378-4383

Novel L-shaped dual-gate structure of polycrystalline silicon thin-film transistors for the reduction of the kink current in sequential lateral solidification or continuous wave laser method

(6) Shin, Hee Sun a Jung, Sang Hoon b Nam, Woo Jin a Lee, Won Kyu a Lee, Hye Jin a Han, Min Koo a

a Seoul National University (South Korea)

b LG Display Co Ltd (South Korea)

Author keywords

Dual gate TFT kink current; L shaped dual gate TFT; Poly Si TFT; Saturation current

Indexed keywords

CONTINUOUS WAVE LASERS; GATES (TRANSISTOR); GRAIN GROWTH; POLYSILICON;

DUAL GATE TFT KINK CURRENT; L SHAPED DUAL GATE TFT; POLY SI TFT; SATURATION CURRENT;

THIN FILM TRANSISTORS;

EID: 33744475859 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.4378 Document Type: Article

Times cited : (9)

References (13)

1
- 0024908311
- K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko and K. Hotta: IEEE Trans. Electron Devices 36 (1989) 2868.
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 2868
- Sera, K.¹ Okumura, F.² Uchida, H.³ Itoh, S.⁴ Kaneko, S.⁵ Hotta, K.⁶

2
- 0029254431
- D. P. Gosain, J. Westwater and S. Usui: Jpn. J. Appl. Phys. 34 (1995) 937.
- (1995) Jpn. J. Appl. Phys. , vol.34 , pp. 937
- Gosain, D.P.¹ Westwater, J.² Usui, S.³

3
- 0032137394
- M. A. Crowder, P. G. Carey, P. M. Smith, R. S. Sposili, H. S. Cho and J. Ira: IEEE Electron Device Lett. 19 (1998) 306.
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 306
- Crowder, M.A.¹ Carey, P.G.² Smith, P.M.³ Sposili, R.S.⁴ Cho, H.S.⁵ Ira, J.⁶

4
- 0035716646
- A. Hara, Y. Mishima, T. Kakehi, F. Takeuchi, M. Takei, K. Yoshino, K. Suga, M. Chida and N. Sasaki: IEDM Tech. Dig., 2001, p. 747.
- (2001) IEDM Tech. Dig. , pp. 747
- Hara, A.¹ Mishima, Y.² Kakehi, T.³ Takeuchi, F.⁴ Takei, M.⁵ Yoshino, K.⁶ Suga, K.⁷ Chida, M.⁸ Sasaki, N.⁹

5
- 0024177453
- A. G. Lewis, T. Y. Huang, R. H. Bruce, M. Koyanagi, A. Chiang and I. W. Wu: IEDM Tech. Dig., 1988, p. 264.
- (1988) IEDM Tech. Dig. , pp. 264
- Lewis, A.G.¹ Huang, T.Y.² Bruce, R.H.³ Koyanagi, M.⁴ Chiang, A.⁵ Wu, I.W.⁶

6
- 0031341418
- M. Valdinoci, L. Colalongo, G. Baccarani, G. Fortunato, A. Pecora and I. Policicchio: IEEE Trans. Electron Devices 44 (1997) 2234.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 2234
- Valdinoci, M.¹ Colalongo, L.² Baccarani, G.³ Fortunato, G.⁴ Pecora, A.⁵ Policicchio, I.⁶

7
- 0035447817
- J.-H. Jeon, M.-C. Lee, K.-C. Park and M.-K. Han: IEEE Electron Device Lett. 22 (2001) 429.
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 429
- Jeon, J.-H.¹ Lee, M.-C.² Park, K.-C.³ Han, M.-K.⁴

8
- 0034452627
- J.-S. Yoo, C.-H. Kim, M.-C. Lee, M.-K. Han and H. J. Kim: IEDM Tech. Dig., 2000, p. 217.
- (2000) IEDM Tech. Dig. , pp. 217
- Yoo, J.-S.¹ Kim, C.-H.² Lee, M.-C.³ Han, M.-K.⁴ Kim, H.J.⁵

9
- 0346076626
- M.-C. Lee and M.-K. Han: IEEE Electron Device Lett. 25 (2004) 25.
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 25
- Lee, M.-C.¹ Han, M.-K.²

10
- 33644922412
- W.-J. Nain, H.-S. Shin, J.-H. Kim, S.-H. Jung and M.-K. Han: Jpn. J. Appl. Phys. 45 (2006) 1483.
- (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 1483
- Nain, W.-J.¹ Shin, H.-S.² Kim, J.-H.³ Jung, S.-H.⁴ Han, M.-K.⁵

11
- 17444363758
- K.-C. Moon, J.-H. Lee and M.-K. Han: IEEE Trans. Electron Devices 52 (2005) 512.
- (2005) IEEE Trans. Electron Devices , vol.52 , pp. 512
- Moon, K.-C.¹ Lee, J.-H.² Han, M.-K.³

12
- 33744477393
- T. Yoshida, K. Yoshino, M. Takei, A. Hara, N. Sasaki and T. Tsuchiya: IEDM Tech. Dig., 2003, p. 8.8.1.
- (2003) IEDM Tech. Dig.
- Yoshida, T.¹ Yoshino, K.² Takei, M.³ Hara, A.⁴ Sasaki, N.⁵ Tsuchiya, T.⁶

13
- 0042388014
- T.-F. Chen, C.-F. Yeh and J.-C. Lou: IEEE Electron Device Lett. 24 (2003) 457.
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 457
- Chen, T.-F.¹ Yeh, C.-F.² Lou, J.-C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.