Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 590-592

  He, Yi ^a,c   Hattori, Reiji ^a,b   Kanicki, Jerzy ^a,d  

^a University of Michigan   (United States)

^b KYUSHU UNIVERSITY   (Japan)

^c UNIVERSITY OF MICHIGAN   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRIC PROPERTIES; HYDROGENATION; LIGHT EMITTING DIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; THRESHOLD VOLTAGE;

ORGANIC LIGHT-EMITTING DISPLAYS (OLEDS);

THIN FILM TRANSISTORS;

EID: 0034498528     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887475     Document Type: Article

References (8)

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7. M. Stewart et al., "Polysilicon VGA active matrix OLED display - Technology and performance," in IEDM Tech. Dig., 1998, pp. 871-874.
8. Y. He, R. Hattori, and J. Kanicki, Improved A-Si:H TFT circuits for active-matrix organic light emitting displays, submitted for publication.