A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors

Solid-State Electronics

Volumn 39, Issue 9, 1996, Pages 1337-1346

  Armstrong, G A ^a   Brotherton, S D ^b   Ayres, J R ^b  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; IONIZATION; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THIN FILM TRANSISTORS;

DOPING DENSITY; IMPACT IONIZATION; PSEUDO BIPOLAR GAIN;

ELECTRIC FIELD EFFECTS;

EID: 0030242417     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(96)00030-5     Document Type: Review

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