-
1
-
-
0029322855
-
Polycrystalline silicon thin film transistors
-
S. D. Brotherton, "Polycrystalline silicon thin film transistors," Semicond. Sci. Technol., vol. 10, pp. 721-738, 1995.
-
(1995)
Semicond. Sci. Technol.
, vol.10
, pp. 721-738
-
-
Brotherton, S.D.1
-
2
-
-
0011948451
-
Low temperature poly-silicon TFT technology and its application to 12.1-inch XGA
-
K. Suzuki, M. Tada, Y. Yamazi, and Y. Ishizuka, "Low temperature poly-silicon TFT technology and its application to 12.1-inch XGA," in AM-LCD Tech. Dig., 1998, pp. 5-8.
-
(1998)
AM-LCD Tech. Dig.
, pp. 5-8
-
-
Suzuki, K.1
Tada, M.2
Yamazi, Y.3
Ishizuka, Y.4
-
3
-
-
0033332475
-
Low-temperature polysilicon thin-film transistor driving with integrated driver for high resolution light emitting polymer display
-
Dec
-
M. Kimura, I. Yudasaka, S. Kanbe, H. Kobayashi, H. Kiguchi, S. Seki, S. Miyashita, T. Shimoda, T Ozawa, K. Kitawada, T. Nakazawa, W. Miyazawa, and H. Ohshima, "Low-temperature polysilicon thin-film transistor driving with integrated driver for high resolution light emitting polymer display," IEEE Trans. Electron Devices, vol. 46, pp. 2282-2288, Dec. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 2282-2288
-
-
Kimura, M.1
Yudasaka, I.2
Kanbe, S.3
Kobayashi, H.4
Kiguchi, H.5
Seki, S.6
Miyashita, S.7
Shimoda, T.8
Ozawa, T.9
Kitawada, K.10
Nakazawa, T.11
Miyazawa, W.12
Ohshima, H.13
-
4
-
-
0001716550
-
Control and analysis of leakage currents in poly-Si thin-film transistors
-
S. D. Brotherton, J. R. Ayres, and M. J. Trainor, "Control and analysis of leakage currents in poly-Si thin-film transistors," J. Appl. Phys., vol. 79, pp. 895-904, 1996.
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 895-904
-
-
Brotherton, S.D.1
Ayres, J.R.2
Trainor, M.J.3
-
5
-
-
0031341418
-
Floating body effects in polysilicon thin-film transistors
-
Dec
-
M. Valdinoci, L. Colalongo, G. Baccarani, G. Fortunato, A. Pecora, and I. Policicchio, "Floating body effects in polysilicon thin-film transistors," IEEE Trans. Electron Devices, vol. 44, pp. 2234-2241, Dec. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 2234-2241
-
-
Valdinoci, M.1
Colalongo, L.2
Baccarani, G.3
Fortunato, G.4
Pecora, A.5
Policicchio, I.6
-
6
-
-
0032050442
-
Analysis of drain field and hot-carrier stability in polysilicon thin film transistors
-
J. R. Ayres, S. D. Brotherton, D. J. McCulloch, and M. J. Trainor, "Analysis of drain field and hot-carrier stability in polysilicon thin film transistors," Jpn. J. Appl. Phys., vol. 37, pp. 1801-1808, 1998.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 1801-1808
-
-
Ayres, J.R.1
Brotherton, S.D.2
McCulloch, D.J.3
Trainor, M.J.4
-
7
-
-
0023421569
-
-
Apr
-
S. Seki, O. Kogure, and B. Tsujiyama, IEEE Electron Device Lett., vol. 8, pp. 434-436, Apr. 1987.
-
(1987)
IEEE Electron Device Lett.
, vol.8
, pp. 434-436
-
-
Seki, S.1
Kogure, O.2
Tsujiyama, B.3
-
8
-
-
0023851207
-
Characteristics of off-set structure polycristalline-silicon thin-film transistors
-
Jan
-
K. Tanaka, H. Arai, and S. Kohda, "Characteristics of off-set structure polycristalline-silicon thin-film transistors," IEEE Electron Device Lett., vol. 9, pp. 23-25, Jan. 1988.
-
(1988)
IEEE Electron Device Lett.
, vol.9
, pp. 23-25
-
-
Tanaka, K.1
Arai, H.2
Kohda, S.3
-
9
-
-
0024739568
-
Development and electrical characteristics of undoped polyciistalline silicon thin-film transistors
-
Oct
-
R. E. Proano, R. S. Misage, and D. G. Ast, "Development and electrical characteristics of undoped polyciistalline silicon thin-film transistors," IEEE Trans. Electron Devices, vol. 36, pp. 1915-1922, Oct. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 1915-1922
-
-
Proano, R.E.1
Misage, R.S.2
Ast, D.G.3
-
10
-
-
0032050442
-
Analysis of drain field and hot-carrier stabilty in polysilicon thin-film transistors
-
J. R. Ayres, S. D. Brotherton, D. J. McCulloch, and M. J. Trainor, "Analysis of drain field and hot-carrier stabilty in polysilicon thin-film transistors," Jpn. J. Appl. Phys., vol. 37, pp. 1801-1808, 1998.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 1801-1808
-
-
Ayres, J.R.1
Brotherton, S.D.2
McCulloch, D.J.3
Trainor, M.J.4
-
11
-
-
4344649238
-
-
G. Fortunato, D. Saias, A. Pecora, R. Carluccio, L. Mariucci, and F. Massussi, AM-LCD Tech. Dig., 1998, pp. 89-89.
-
(1998)
AM-LCD Tech. Dig.
, pp. 89-89
-
-
Fortunato, G.1
Saias, D.2
Pecora, A.3
Carluccio, R.4
Mariucci, L.5
Massussi, F.6
-
12
-
-
4344653044
-
Asymmetric fingered polysilicon thin film transistors for kink-effect suppression
-
L. Mariucci, G. Fortunato, A. Bonfiglietti, M. Cuscunà, A. Pecora, and A. Valletta, "Asymmetric fingered polysilicon thin film transistors for kink-effect suppression," in AM-LCD Tech. Dig., 2003, pp. 57-57.
-
(2003)
AM-LCD Tech. Dig.
, pp. 57-57
-
-
Mariucci, L.1
Fortunato, G.2
Bonfiglietti, A.3
Cuscunà, M.4
Pecora, A.5
Valletta, A.6
-
13
-
-
4344706680
-
Characteristics of asymmetric dual-gate poly-Si TFTs for kink current reduction
-
M.-C. Lee, S.-J. Park, M.-Y. Shin, and M.-K. Han, "Characteristics of asymmetric dual-gate poly-Si TFTs for kink current reduction," in SID Tech. Dig., 2003, pp. 252-255.
-
(2003)
SID Tech. Dig.
, pp. 252-255
-
-
Lee, M.-C.1
Park, S.-J.2
Shin, M.-Y.3
Han, M.-K.4
-
14
-
-
0008957105
-
Determination of gap state density in polycrystalline silicon by field-effect conductance
-
G. Fortunato and P. Migliorato, "Determination of gap state density in polycrystalline silicon by field-effect conductance," Appl. Phys. Lett., vol. 49, pp. 1025-1027, 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 1025-1027
-
-
Fortunato, G.1
Migliorato, P.2
-
15
-
-
0006981518
-
Numerical simulations of amorphous and polycrystalline silicon thin-film transistors
-
M. Hack, J. G. Shaw, P. G. LeComber, and M. Willums, "'Numerical simulations of amorphous and polycrystalline silicon thin-film transistors'," Jpn. J. Appl. Phys., vol. 29, pp. L2360-L2362, 1990.
-
(1990)
Jpn. J. Appl. Phys.
, vol.29
-
-
Hack, M.1
Shaw, J.G.2
LeComber, P.G.3
Willums, M.4
-
16
-
-
0031238135
-
Analysis and characterization of polycrystalline silicon thin-film transistors
-
M. Valdinoci, L. Colalongo, G. Baccarani, A. Pecora, I. Policicchio, G. Fortunato, F. Plais, P. Legagneux, C. Reita, and D. Pribat, "Analysis and characterization of polycrystalline silicon thin-film transistors," Solid State Electron., vol. 41, pp. 1363-1369, 1997.
-
(1997)
Solid State Electron.
, vol.41
, pp. 1363-1369
-
-
Valdinoci, M.1
Colalongo, L.2
Baccarani, G.3
Pecora, A.4
Policicchio, I.5
Fortunato, G.6
Plais, F.7
Legagneux, P.8
Reita, C.9
Pribat, D.10
-
17
-
-
0032047484
-
Numerical analysis of electrical characteristics of polysilicon thin-film transistors fabricated by excimer laser crystallization
-
L. Mariucci, F. Giacometti, A. Pecora, F. Massussi, G. Fortunato, M. Valdinoci, and L. Colalongo, "Numerical analysis of electrical characteristics of polysilicon thin-film transistors fabricated by excimer laser crystallization," Electron. Lett., vol. 34, pp. 924-926, 1998.
-
(1998)
Electron. Lett.
, vol.34
, pp. 924-926
-
-
Mariucci, L.1
Giacometti, F.2
Pecora, A.3
Massussi, F.4
Fortunato, G.5
Valdinoci, M.6
Colalongo, L.7
-
18
-
-
0000845924
-
Macroscopic theory of pulsed-laser annealing II. Dopant diffusion and segregation
-
R. F. Wood, J. R. Kirkpatrick, and G. E. Giles, "Macroscopic theory of pulsed-laser annealing II. Dopant diffusion and segregation," Phys. Rev. B, Condens. Matter, vol. 23, pp. 5555-5569, 1980.
-
(1980)
Phys. Rev. B, Condens. Matter
, vol.23
, pp. 5555-5569
-
-
Wood, R.F.1
Kirkpatrick, J.R.2
Giles, G.E.3
|