Anomalous increased drain current characteristics of a-Si:H TFTs with long channel width

Digest of Technical Papers - SID International Symposium

Volumn 38, Issue 1, 2007, Pages 268-271

  Jin, Sung Hun ^a   Park, Mun Soo ^a   Kim, Jeong Il ^a   Kim, Dong Gyu ^a   Kim, Nam Deog ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC FIELDS; ENERGY DISSIPATION;

CHANNEL WIDTH; FIELD EFFECT MOBILITY; NPN BIPOLAR ACTION;

THIN FILM TRANSISTORS;

EID: 34547918864     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2785281     Document Type: Conference Paper

References (17)

1. S. Y. Yoon, Y. H. Jang, B. Kim, M. D. Chun, H. N. Cho, N. W. Cho, C. Y. Sohn, S. H Jo, C. D. Kim, and I. J. Chung, "Highly Stable Integrated Gate Drive Circuit using a-Si TFT with Dual Pull-down Structure," SID Digest 05, pp. 348-351, 2005.
2. J. Jeon, K. Choo, W. K. Lee, J. H. Song, and H. G. Kim, "Integrated a-Si Gate Driver Circuits for TFT-LCD Panel," SID Digest 04, pp. 10-13, 2005.
3. C. H. Kim, S. J. Yoo, H. J. Kim, J. M. Jun, J. Y. Lee, "Integrated a-Si TFT row driver circuits for high-resolution applications," Journal of SID, vol. 14/4, pp. 333-337, 2006.
4. C. H. Kim, S. J. Yoo, H. J. Kim, J. M. Jun, J. Y. Lee, "Integrated a-Si TFT row driver circuits for high-resolution applications," Journal of SID, vol. 14/4, pp. 333-337, 2006.
5. B. S. Bae, J. W. Choi, J. H. Oh, J. Jang, "Level Shifter Embedded in Drive Circuits With Amorphous Silicon TFTs," IEEE Electron Devices, vol. 53, no. 3, pp.494-498, 2006.
6. T. Shirasaki, T. Ozaki, K. Sato, M. Kumagai, M. Takei, T. Toyama, S. Shimoda and T. Tano, "Full-color Polymer AM-OLED using Ink-jet and a-Si TFT Technologies," SID Digest 04, pp. 1516-1519, 2004.
7. H. Okada, Y. Uchida, K. Arai, S. Oda, and M. Matsumura, "Vertical-Type Amorphous-Silicon MOSFET ICs," IEEE Electron Devices, vol. 35, no. 7, pp.919-922, 1988.
8. C. D. Kim, M. Matsumura, "Short-Channel Amorphous - Silicon Thin-Film Transistors," IEEE Electron Devices, vol. 43, no. 12, pp.2172-2176, 1996.
9. Y. Uchida, and M. Matsumura,"Short-Channel a-Si ThinFilm MOS Transistors," IEEE Electron Devices, vol. 36, no. 12, pp.2940-2943, 1989.
10. M. J. Powell, C Berkel, I. D. French, and D. H. Nicholls, "Bias dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett. vol. 51, no. 19, pp. 1242-1244, 1987.
11. M. J. Powell, C Berkel, I. D. French, and D. H. Nicholls, "Bias dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett. vol. 51, no. 19, pp. 1242-1244, 1987.
12. N. Golo, Fred G. kuper, Ton J. Mouthaan, "Analysis of the Electrical Breakdown in Hydrogenated Amorphous Silicon Thin-Film Transistors," IEEE Electron Devices, vol. 49, no. 6, pp.1012-1018, 2002.
13. D. E. Castle Berry, G. E. Possin, "A 1 Mega-pixel color a-Si TFT liquid crystal display," SID Digest 1988, pp. 232, 2005.
14. Yuhua Cheng, Tor A. Fjeldy, "Unified Physical I-V Model Including Self-Heating Effect for Fully Depleted SOI/MOSFET's," IEEE Electron Devices, vol. 43, no. 8, pp. 1291-1296, 1996.
15. L. Wang, Tor A. Fjeldy, B. Iniguez, H. Slade, M. S. Shur, "Self Heating and Kink Effects in a a-Si: H Thin Film Transistors," IEEE Electron Devices, vol. 47, no. 2, pp.387-397, 2000.
16. Mark D. Jacunski, M. S. Shur, Albert A. Owusu, T. ytterdal, M. Hack, "A Short-Channel DC SPICE Model for Polysilicon Thin-Film Transistors Including Temperature Effects," IEEE Electron Devices, vol. 46, no. 6, pp.1146-1158, 1999.
17. E. J. Meijer, M. Matters, P. T. Herwig, D. M. de Leeuw, T. M. Klapwijk, "The Meyer-Neldel rule in organic thin film transistors," Appl. Phys. Lett., vol. 76, no. 23, pp. 3433-3435, 2000.