Analysis of the electrical breakdown in hydrogenated amorphous silicon thin-film transistors

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 1012-1018

  Golo, Nataša Tošić ^b   Kuper, Fred G ^a,b,c   Mouthaan, Ton J ^a,b  

^a IEEE

^b UNIVERSITY OF TWENTE   (Netherlands)

^c NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Electric breakdown; Liquid crystal displays; Semticonductor device reliability; Thin film devices

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC SWITCHES; ELECTROSTATICS; HYDROGENATION; LIQUID CRYSTAL DISPLAYS;

ELECTROTHERMAL SIMULATION;

THIN FILM TRANSISTORS;

EID: 0036610585     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003722     Document Type: Article

References (12)

1. Transmission line model testing of top-gate amorphous silicon thin film transistors
2. Timevoltage trade-off for ESD damage threshold in amorphous silicon thin film transistors
3. Thermal failure in semiconductor devices
4. Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diode
5. Current transport modeling in an amorphous silicon antifuse structure