Lucky drift impact ionization in amorphous semiconductors

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2037-2048

  Kasap, Safa ^a,d   Rowlands, J A ^a   Baranovskii, S D ^b   Tanioka, Kenkichi ^c  

^a UNIVERSITY OF TORONTO   (Canada)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^d UNIVERSITY OF SASKATCHEWAN   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; CRYSTALLINE MATERIALS; ELECTRONS; ENERGY GAP; IONIZATION; PHOTOCURRENTS; QUANTUM EFFICIENCY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SENSORS; SIGNAL TO NOISE RATIO;

AMORPHOUS SEMICONDUCTORS; IMPACT IONIZATION COEFFICIENTS; MOMENTUM RELAXATION; THRESHOLD ENERGY;

AMORPHOUS MATERIALS;

EID: 4344599260     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1763986     Document Type: Article

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