Drain bias dependent bias temperature stress instability in a-Si:H TFT

Solid-State Electronics

Volumn 53, Issue 2, 2009, Pages 225-233

  Tang, Z ^a   Park, M S ^b   Jin, S H ^b   Wie, C R ^a  

^a The State University of New York ^*  (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

a Si:H Thin film transistor; Bias temperature stress; Threshold voltage shift

Indexed keywords

DRAIN CURRENT; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

A-SI:H THIN FILM TRANSISTOR; BIAS TEMPERATURE STRESS; CURRENT RANGES; DRAIN BIASES; GATE BIAS DEPENDENCES; HYDROGENATED AMORPHOUS SILICONS; LINEAR AVERAGES; MEASURED DATUMS; NON UNIFORMS; OVERDRIVE VOLTAGES; SATURATION TRANSFERS; SIDE CHANNELS; WEIGHTED AVERAGES;

AMORPHOUS SILICON;

EID: 58349087212     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.11.011     Document Type: Article

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