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Volumn 96, Issue 10, 2010, Pages

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

(11) Leach, J H a Wu, M a Ni, X a Li, X a Xie, J a Ozgur U a Morko H a Paskova, T b Preble, E b Evans, K R b Lu, Chang Zhi c

a Virginia Commonwealth University (United States)

b KYMA TECHNOLOGIES INC (United States)

c BEIJING UNIVERSITY OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; CARRIER VELOCITY; CURRENT GAIN CUTOFF FREQUENCY; FE-DOPED; GAN SUBSTRATE; GATE LAG; GATE LENGTH; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HETEROSTRUCTURES; LARGE-SIGNALS; MICROWAVE CHARACTERISTICS;

CUTOFF FREQUENCY; DEFECT DENSITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 77949663480 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3358192 Document Type: Article

Times cited : (12)

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