Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Nanotechnology

Volumn 21, Issue 13, 2010, Pages

  Ho, C Y ^a   Chiu, S H ^a   Ke, J J ^a   Tsai, K T ^a   Dai, Y A ^a   Hsu, J H ^b   Chang, M L ^b   He, J H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b IST Integrated Service Technology   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; CONTACT BEHAVIOR; IMAGE FORCE; INDUCED DEPOSITION; INTERFACE STATE; OHMIC BEHAVIOR; P-TYPE SI; PRACTICAL METHOD; SCHOTTKY BARRIER HEIGHTS; SI NANOWIRE; SPECIFIC CONTACT RESISTANCES;

FOCUSED ION BEAMS; IONS; NANOWIRES; PLATINUM; SCHOTTKY BARRIER DIODES;

SILICON;

EID: 77949399857     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/13/134008     Document Type: Article

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