Resolving microscopic interfaces in Si1-xGex alloy nanowire devices

Nanotechnology

Volumn 20, Issue 11, 2009, Pages

  Jeon, Eun Kyoung ^a,b   Seo, Hyunsang ^c   Ahn, Chi Won ^c   Seong, Hankyu ^d   Choi, Heon Jin ^d   Kim, Ju Jin ^b   Kong, Ki Jeong ^a   Buh, Gyoungho ^a   Chang, Hyunju ^a   Lee, Jeong O ^a  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b Chonbuk National University   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

^d Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRICAL TRANSPORT CHARACTERISTICS; ELECTRICAL TRANSPORT MEASUREMENTS; NANOWIRE DEVICES; P TYPES; RESISTANCE SWITCHING; RESISTANCE SWITCHING EFFECTS; TRANSMISSION ELECTRONS;

ELECTRIC NETWORK ANALYSIS; GERMANIUM; NANOWIRES; SILICON; SILICON ALLOYS; SWITCHING; SWITCHING SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRIC WIRE;

ALLOY; GOLD; NANOWIRE; NICKEL; SILICON; SILICON DIOXIDE; SILICON NITRIDE;

ARTICLE; CONTROLLED STUDY; ELECTRODE; ELECTRONICS; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE SENSITIVITY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 65549152498     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/11/115708     Document Type: Article

References (32)

1. Kim J K, Je J H, Lee J-L, Park Y J and Lee B-T 2000 J. Electrochem. Soc. 147 4645
2. Sumiya T, Miura T, Fujinuma H and Tanaka S 1997 Appl. Surf. Sci. 117 329
3. Hu C Y, Ding Z B, Qin Z X, Chen Z Z, Yang Z J, Yu T J, Hu X D, Yao S D and Zhang G Y 2006 Semicond. Sci. Technol. 21 1261
4. Huet F, Di Forte-Poission M-A, Calligaro M, Olivier J, Wyczisk F and Di Persio J J 1999 J. Electron. Mater. 28 1440
5. Cui Y, Zhong Z H, Wang D L, Wang W U and Lieber C M 2003 Nano Lett. 3 149
6. Xiang J, Lu W, Hu Y, Wu Y, Yan H and Lieber C M 2006 Nature 441 489
7. Duan X, Huang Y and Lieber C M 2002 Nano Lett. 2 487
8. Zhong Z, Qian F, Wang D and Lieber C M 2003 Nano Lett. 3 343
9. Suehiro J, Nakagawa N, Hidaka S, Ueda M, Imasaka K, Higashihata M, Okada T and Hara M 2006 Nanotechnology 17 2567
10. Kim B-K, Oh H, Kim S-R, Kim J-R, Kim J-J, Lee J-O and Lee C J 2006 Appl. Phys. A 85 255
11. Patolsky F, Zheng G, Hayden O, Lakadamyali M, Zhuang X and Lieber C M 2004 Proc Natl Acad. Sci. 101 14017
12. Zheng G, Patolsky F, Cui Y, Wang W U and Lieber C M 2005 Nat. Biotechnol. 23 1294
13. Cui Y, Wei Q, Park H and Lieber C M 2001 Science 293 1289
14. Qin Y, Wang X and Wang Z L 2008 Nature 451 809
15. Tian B, Zeng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J and Lieber C M 2007 Nature 449 885
16. Chan C K, Peng H, Liu G, McIlrath K, Zhang X F, Huggins R A and Cui Y 2008 Nat. Nanotechnol. 3 31
17. Allen J E et al 2008 Nat. Nanotechnol. 3 168
18. den Hertog M I, Rouviere J-L, Dhalluin F, Desre P J, Gentile P, Ferret P, Oehler F and Baron T 2008 Nano Lett. 8 1544
19. Sung H-K, Jeon E-K, Kim M-H, Oh H, Lee J-O, Kim J-J and Choi H C 2008 Nano Lett. 8 3656
20. Lee S-H, Jung Y and Agarwal R 2007 Nat. Nanotechnol. 2 626
21. Zhang S-L 2003 Microelectron. Eng. 70 174
22. Wu Y, Xlang J, Yang C, Lu W and Lieber C M 2004 Nature 430 61
23. Appenzeller J, Knoch J, Tutuc E, Reuter M and Guha S 2006 IEDM' 06: Electron Devices Mtg Int.
24. Weber W M et al 2006 Nano Lett. 6 2660
25. Lin Y-C, Lu K-C, Wu W-W, Bai J, Chen L J, Tu K N and Huang Y 2008 Nano Lett. 8 913
26. Sharma B L 1970 Diffusion in Semiconductors (Germany: Trans. Tech.)
27. Kanno H, Aoki T, Kenjo A, Sadoh T and Miyao M 2005 Japan. J. Appl. Phys. 44 2405
28. Nam C Y, Tham D and Fisher J E 2005 Nano Lett. 5 2029
29. Tham D, Nam C Y and Fisher J E 2006 Adv. Mater. 18 290
30. Bucher E, Schulz S, Lux-Steiner M Ch, Munz P, Gubler U and Greuter F 1986 Appl. Phys. A 40 71
31. Deoboer F R, Boom R, Mattens W C, Miedema A R and Niessen A K 1988 Cohesion in Metals: Transition Metal Alloys (Amsterdam: North-Holland)
32. Pey K L, Choi W K, Chattopadhyay S, Zhao H B, Fitzgerald E A, Antoniadis D A and Lee P S 2002 J. Vac. Sci. Technol. A 20 1903