Nickel monosilicide contact formation in electrolessly etched silicon nanowires deposited onto nickel electrodes

Journal of the Electrochemical Society

Volumn 156, Issue 7, 2009, Pages

  Xu, Wanli ^a   Palshin, Vadim ^b   Flake, John C ^a  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b LOUISIANA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT FORMATION; ELECTRICAL CHARACTERIZATION; ELECTRODE PAIRS; ELECTROLESS; INTER-DIGITATED ELECTRODES; LARGE ARRAYS; LINEAR CURRENTS; NICKEL ELECTRODE; NICKEL MONOSILICIDE; NONVACUUM PROCESS; P-TYPE SILICON WAFERS; SILICON NANOWIRES; X-RAY ABSORPTION NEAR-EDGE STRUCTURE;

ABSORPTION SPECTROSCOPY; ELECTRIC WIRE; ELECTRODES; NANOWIRES; NICKEL; NICKEL ALLOYS; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON WAFERS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 65949103185     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3122703     Document Type: Article

References (24)

1. Y. Cui, Z. H. Zhong, D. L. Wang, W. U. Wang, and C. M. Lieber, Nano Lett., 3, 149 (2003). 10.1021/nl025875l
2. Y. Cui, Q. Q. Wei, H. K. Park, and C. M. Lieber, Science, 293, 1289 (2001). 10.1126/science.1062711
3. C. K. Chan, H. L. Peng, G. Liu, K. Mcllwrath, X. F. Zhang, R. A. Huggins, and Y. Cui, Nat. Nanotechnol., 3, 31 (2008). 10.1038/nnano.2007.411
4. A. K. Wanekaya, W. Chen, N. V. Myung, and A. Mulchandani, Electroanalysis, 18, 533 (2006). 10.1002/elan.200503449
5. Z. R. Scheibal, W. Xu, J. F. Audiffred, J. E. Henry, and J. C. Flake, Electrochem. Solid-State Lett., 11, K81 (2008). 10.1149/1.2937178
6. J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda, J. Vac. Sci. Technol. B, 15, 554 (1997). 10.1116/1.589291
7. J. D. Holmes, K. P. Johnston, R. C. Doty, and B. A. Korgel, Science, 287, 1471 (2000). 10.1126/science.287.5457.1471
8. D. P. Yu, Z. G. Bai, Y. Ding, Q. L. Hang, H. Z. Zhang, J. J. Wang, Y. H. Zou, W. Qian, G. C. Xiong, H. T. Zhou, Appl. Phys. Lett., 72, 3458 (1998). 10.1063/1.121665
9. K. M. Chang, K. S. You, J. H. Lin, and J. T. Sheu, J. Electrochem. Soc., 151, G679 (2004). 10.1149/1.1795254
10. K. Q. Peng, Y. J. Yan, S. P. Gao, and J. Zhu, Adv. Mater. (Weinheim, Ger.), 14, 1164 (2002). 10.1002/1521-4095(20020816)14:16<1164::AID- ADMA1164>3.0.CO;2-E
11. K. Q. Peng, Y. J. Yan, S. P. Gao, and J. Zhu, Adv. Funct. Mater., 13, 127 (2003). 10.1002/adfm.200390018
12. K. Q. Peng, H. Fang, J. Hu, Y. Wu, J. Zhu, Y. Yan, and S. T. Lee, Chem.-Eur. J., 12, 7942 (2006). 10.1002/chem.200600032
13. V. Lehmann and H. Foll, J. Electrochem. Soc., 137, 653 (1990). 10.1149/1.2086525
14. J. P. Gambino and E. G. Colgan, Mater. Chem. Phys., 52, 99 (1998). 10.1016/S0254-0584(98)80014-X
15. Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, Nature (London), 430, 61 (2004). 10.1038/nature02674
16. G. Zheng, W. Lu, S. Jin, and C. M. Lieber, Adv. Mater. (Weinheim, Ger.), 16, 1890 (2004). 10.1002/adma.200400472
17. M. Liebau, E. Unger, G. S. Duesberg, A. P. Graham, R. Seidel, F. Kreupl, and W. Hoenlein, Appl. Phys. A: Mater. Sci. Process., 77, 731 (2003). 10.1007/s00339-003-2207-4
18. W. M. Weber, L. Geelhaar, A. P. Graham, E. Unger, G. S. Duesberg, M. Liebau, W. Palmer, C. Cheze, H. Riechert, P. Lugli, Nano Lett., 6, 2660 (2006). 10.1021/nl0613858
19. T. Ohmi, J. Electrochem. Soc., 143, 2957 (1996). 10.1149/1.1837133
20. C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder, and G. E. Muilenberg, Handbook of X-ray Photo Electron Spectroscopy, Perkin-Elmer, Eden Prairie, Minnesota (1979).
21. V. I. Nefedov, X-ray Photoelectron Spectroscopy of Solid Surfaces, p. 21, Utrecht, The Netherlands (1988).
22. T. T. A. Nguyen and R. Cinti, Phys. Scr., T, T4, 176 (1983). 10.1088/0031-8949/1983/T4/040
23. V. Atzrodt, T. Wirth, and H. Lange, Phys. Status Solidi A, 62, 531 (1980). 10.1002/pssa.2210620222
24. S. J. Naftel, I. Coulthard, T. K. Sham, S. R. Das, and D. X. Xu, Phys. Rev. B, 57, 9179 (1998). 10.1103/PhysRevB.57.9179