Characteristics of the series resistance extracted from Si Nanowire FETs Using the Y-function technique

IEEE Transactions on Nanotechnology

Volumn 9, Issue 2, 2010, Pages 212-217

  Baek, Rock Hyun ^a   Baek, Chang Ki ^b   Jung, Sung Woo ^c   Yeoh, Yun Young ^d   Kim, Dong Won ^d   Lee, Jeong Soo ^a   Kim, Dae M ^a   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Korea Institute for Advanced Study   (South Korea)

^c National Institute for Nanomaterials Technology (NINT)   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

FET(TSNWFET); Gate all around (GAA); MOSFET; Nanowire; Rsd; Series resistance; Twin silicon nanowire; Y function

Indexed keywords

CHANNEL LENGTH; DATA FITTINGS; FET(TSNWFET); GATE VOLTAGES; GATE-ALL-AROUND MOSFET; ITERATION PROCEDURE; LINEAR BEHAVIOR; NANOWIRE DEVICES; PROCESS PARAMETERS; SERIES RESISTANCES; SI NANOWIRE; SILICON NANOWIRE FETS; SILICON NANOWIRES; STRONG INVERSION; SURFACE SCATTERING; VOLUME CHANNEL;

DRAIN CURRENT; GALLIUM ALLOYS; MESFET DEVICES; MOSFET DEVICES; NANOWIRES; OHMIC CONTACTS;

SILICON;

EID: 77949384348     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2009.2028024     Document Type: Article

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