-
1
-
-
34249880868
-
-
International Technology Roadmap for Semiconductors ITRS, Online, Available
-
International Technology Roadmap for Semiconductors (ITRS) 2005. [Online]. Available: http://public.itrs.net/
-
(2005)
-
-
-
2
-
-
0038161696
-
High performance silicon nanowire field effect transistors
-
Feb
-
Y. Cui, Z. Zhong, D. Wang, W. Wang, and C. M. Lieber, "High performance silicon nanowire field effect transistors," Nano Lett., vol. 3, no 2, pp. 149-152, Feb. 2003.
-
(2003)
Nano Lett
, vol.3
, Issue.2
, pp. 149-152
-
-
Cui, Y.1
Zhong, Z.2
Wang, D.3
Wang, W.4
Lieber, C.M.5
-
3
-
-
4544367603
-
5 nm-gate nanowire FinFET
-
F. L. Yang, D. H. Lee, H. Y. Chen, C. Y. Chang, S. D. Liu, C. C. Huang, T. X. Chung, H. W. Chen, C. C. Huang, Y. H. Liu, C. C. Wu, C. C. Chen, S. C. Chen, Y. T. Chen, Y. H. Chen, C. J. Chen, B. W. Chan, P. F. Hsu, J. H. Shieh, H. J. Tao, Y. C. Yeo, Y. Li. J. W. Lee, P. Chen, M. S. Liang, and C. Hu, "5 nm-gate nanowire FinFET," in VLSI Symp. Tech. Dig., 2004, pp. 196-197.
-
(2004)
VLSI Symp. Tech. Dig
, pp. 196-197
-
-
Yang, F.L.1
Lee, D.H.2
Chen, H.Y.3
Chang, C.Y.4
Liu, S.D.5
Huang, C.C.6
Chung, T.X.7
Chen, H.W.8
Huang, C.C.9
Liu, Y.H.10
Wu, C.C.11
Chen, C.C.12
Chen, S.C.13
Chen, Y.T.14
Chen, Y.H.15
Chen, C.J.16
Chan, B.W.17
Hsu, P.F.18
Shieh, J.H.19
Tao, H.J.20
Yeo, Y.C.21
Lee, Y.L.J.W.22
Chen, P.23
Liang, M.S.24
Hu, C.25
more..
-
4
-
-
33845901027
-
High performance 5 nm radius twin silicon nanowire MOSFET(TSNWFET): Fabrication on bulk Si wafer, characteristics, and reliability
-
S. D. Suk, S. Y. Lee, S. M. Kim, E. J. Yoon, M. S. Kim, M. Li, C. W. Oh, K. H. Yeo, S. H. Kim, D. S. Shin, K. H. Lee, H. S. Park, J. N. Han, C. J. Park, J. B. Park, D. W. Kim, D. Park, and B. I. Ryu, "High performance 5 nm radius twin silicon nanowire MOSFET(TSNWFET): Fabrication on bulk Si wafer, characteristics, and reliability," in IEDM Tech. Dig., 2005, pp. 735-738.
-
(2005)
IEDM Tech. Dig
, pp. 735-738
-
-
Suk, S.D.1
Lee, S.Y.2
Kim, S.M.3
Yoon, E.J.4
Kim, M.S.5
Li, M.6
Oh, C.W.7
Yeo, K.H.8
Kim, S.H.9
Shin, D.S.10
Lee, K.H.11
Park, H.S.12
Han, J.N.13
Park, C.J.14
Park, J.B.15
Kim, D.W.16
Park, D.17
Ryu, B.I.18
-
5
-
-
33646271349
-
High-performance fully depleted silicon nanowire (diameter ≤ 5 nm) gate-all-around CMOS devices
-
May
-
N. Singh, A. Agarwal, L. K. Bera, T. Y. Liow, R. Yang, S. C. Rustagi, C. H. Tung, R. Kumar, G. Q. Lo, N. Balasubramanian, and D.-L. Kwong, "High-performance fully depleted silicon nanowire (diameter ≤ 5 nm) gate-all-around CMOS devices," IEEE Electron Device Lett. vol. 27, no. 5, pp. 383-386, May 2006.
-
(2006)
IEEE Electron Device Lett
, vol.27
, Issue.5
, pp. 383-386
-
-
Singh, N.1
Agarwal, A.2
Bera, L.K.3
Liow, T.Y.4
Yang, R.5
Rustagi, S.C.6
Tung, C.H.7
Kumar, R.8
Lo, G.Q.9
Balasubramanian, N.10
Kwong, D.-L.11
-
6
-
-
0842331307
-
A computational study of ballistic silicon nanowire transistors
-
J. Wang, E. Polizzi, and M. Lundstrom, "A computational study of ballistic silicon nanowire transistors," in IEDM Tech. Dig., 2003, pp. 695-698.
-
(2003)
IEDM Tech. Dig
, pp. 695-698
-
-
Wang, J.1
Polizzi, E.2
Lundstrom, M.3
-
7
-
-
4344606224
-
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
-
Aug
-
J. Wang, E. Polizzi, and M. S. Lundstrom, "A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation," J. Appl. Phys., vol. 96, no. 4, pp. 2192-2203, Aug. 2004.
-
(2004)
J. Appl. Phys
, vol.96
, Issue.4
, pp. 2192-2203
-
-
Wang, J.1
Polizzi, E.2
Lundstrom, M.S.3
-
8
-
-
21644484375
-
3D quantum modeling and simulation of multiple-gate nanowire MOSFETs
-
M. Bescond, K. Nehari, J. L. Autran, N. Cavassilas, D. Munteanu, and M. Lannoo, "3D quantum modeling and simulation of multiple-gate nanowire MOSFETs," in IEDM Tech. Dig., 2004, pp. 617-620.
-
(2004)
IEDM Tech. Dig
, pp. 617-620
-
-
Bescond, M.1
Nehari, K.2
Autran, J.L.3
Cavassilas, N.4
Munteanu, D.5
Lannoo, M.6
-
9
-
-
26644460422
-
Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs
-
Sep
-
Y. Li, H. M. Chou, and J. W. Lee, "Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs," IEEE Trans. Nanotechnol., vol. 4, no. 5, pp. 510-516, Sep. 2005.
-
(2005)
IEEE Trans. Nanotechnol
, vol.4
, Issue.5
, pp. 510-516
-
-
Li, Y.1
Chou, H.M.2
Lee, J.W.3
-
10
-
-
30344446993
-
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs
-
Jan
-
A. Marchi, E. Gnani, S. Reggiani, M. Rudan, and G. Baccarani, "Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs," Solid State Electron., vol. 50, no. 1, pp. 78-85, Jan. 2006.
-
(2006)
Solid State Electron
, vol.50
, Issue.1
, pp. 78-85
-
-
Marchi, A.1
Gnani, E.2
Reggiani, S.3
Rudan, M.4
Baccarani, G.5
-
11
-
-
0035249575
-
Quantum device-simulation with the density-gradient model on unstructured grids
-
Feb
-
A. Wettstein, A. Schenk, and W. Fichtner, "Quantum device-simulation with the density-gradient model on unstructured grids," IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 279-284, Feb. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.2
, pp. 279-284
-
-
Wettstein, A.1
Schenk, A.2
Fichtner, W.3
-
12
-
-
0000977058
-
Quantum corrections to the equations of state of an electron gas in a semiconductor
-
M. G. Ancona and G. J. Iafrate, "Quantum corrections to the equations of state of an electron gas in a semiconductor," Phys. Rev. B, Condens. Matter, vol. 39, no. 13, pp. 9536-9540, 1989.
-
(1989)
Phys. Rev. B, Condens. Matter
, vol.39
, Issue.13
, pp. 9536-9540
-
-
Ancona, M.G.1
Iafrate, G.J.2
-
13
-
-
3142706175
-
The use of quantum potentials for confinement and tunnelling in semiconductor devices
-
Dec
-
A. Asenov, J. R. Watling, A. R. Brown, and D. K. Ferry, "The use of quantum potentials for confinement and tunnelling in semiconductor devices," J. Comput. Electron., vol. 1. no. 4, pp. 503-513, Dec. 2002.
-
(2002)
J. Comput. Electron
, vol.1
, Issue.4
, pp. 503-513
-
-
Asenov, A.1
Watling, J.R.2
Brown, A.R.3
Ferry, D.K.4
-
14
-
-
84948744764
-
Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-equilibrium greens function calibration
-
Sep. 4-6
-
J. R. Watling, A. R. Brown, A. Asenov, A. Svizhenko, and M. P. Anantram, "Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-equilibrium greens function calibration," in Proc. Int. Simul. Semicond. Process. and Devices Conf., Sep. 4-6, 2002, pp. 267-270.
-
(2002)
Proc. Int. Simul. Semicond. Process. and Devices Conf
, pp. 267-270
-
-
Watling, J.R.1
Brown, A.R.2
Asenov, A.3
Svizhenko, A.4
Anantram, M.P.5
-
15
-
-
2942579366
-
Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures
-
Jun
-
S. Odanaka, "Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 23, no. 6, pp. 837-842, Jun 2004.
-
(2004)
IEEE Trans. Comput.-Aided Design Integr. Circuits Syst
, vol.23
, Issue.6
, pp. 837-842
-
-
Odanaka, S.1
-
16
-
-
0033741127
-
Simulation of nanoscale MOSFETs: A scattering theory interpretation
-
Z. Ren and M. S. Lundstrom, "Simulation of nanoscale MOSFETs: A scattering theory interpretation," Superlattices Microstruct., vol. 27, no. 2/3, pp. 177-189, 2000.
-
(2000)
Superlattices Microstruct
, vol.27
, Issue.2-3
, pp. 177-189
-
-
Ren, Z.1
Lundstrom, M.S.2
-
17
-
-
0042009665
-
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
-
Jul
-
R. Granzner, V.M. Polyakov, F. Schwierz, M. Kittler, and T. Doll, "On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs," Phys. E, vol. 19, no. 1/2, pp. 33-38, Jul. 2003.
-
(2003)
Phys. E
, vol.19
, Issue.1-2
, pp. 33-38
-
-
Granzner, R.1
Polyakov, V.M.2
Schwierz, F.3
Kittler, M.4
Doll, T.5
-
18
-
-
32044450519
-
Simulation of nanoscale MOSFET's using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
-
Feb
-
R. Granzner, V. M. Polyakov, F. Schwierz, M. Kittler, R. J. Luyken, W. Rosner, and M. Stadele, "Simulation of nanoscale MOSFET's using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results," Microelectron. Eng., vol. 83, no. 2, pp. 241-246, Feb. 2006.
-
(2006)
Microelectron. Eng
, vol.83
, Issue.2
, pp. 241-246
-
-
Granzner, R.1
Polyakov, V.M.2
Schwierz, F.3
Kittler, M.4
Luyken, R.J.5
Rosner, W.6
Stadele, M.7
-
20
-
-
33846050832
-
The role of volume inversion on the intrinsic RF performance of double-gate FinFETs
-
Jan
-
G. Curatola and S. Nuttinck, "The role of volume inversion on the intrinsic RF performance of double-gate FinFETs," IEEE Trans. Electron Devices, vol. 54, no. 1, pp. 141-150, Jan. 2007.
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.1
, pp. 141-150
-
-
Curatola, G.1
Nuttinck, S.2
-
22
-
-
0442296355
-
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation
-
Apr
-
S. Eminente, M. Alessandrini, and C. Fiegna, "Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation," Solid State Electron., vol. 48, no. 4, pp. 543-549, Apr. 2004.
-
(2004)
Solid State Electron
, vol.48
, Issue.4
, pp. 543-549
-
-
Eminente, S.1
Alessandrini, M.2
Fiegna, C.3
-
23
-
-
0037560969
-
Influence of device engineering on the analog and RF performances of SOI MOSFETs
-
Mar
-
V. Kilchytska, A. Neve, L. Vancaillie, D. Levacq, S. Adriaensen, H. V. Meer, K. D. Meyer, C. Raynaud, M. Dehan, J. P. Raskin, and D. Flandre, "Influence of device engineering on the analog and RF performances of SOI MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 577-588, Mar. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.3
, pp. 577-588
-
-
Kilchytska, V.1
Neve, A.2
Vancaillie, L.3
Levacq, D.4
Adriaensen, S.5
Meer, H.V.6
Meyer, K.D.7
Raynaud, C.8
Dehan, M.9
Raskin, J.P.10
Flandre, D.11
-
24
-
-
0015600404
-
The insulating-gate field effect transistor - A bipolar transistor in disguise
-
Mar
-
E. O. Johnson, "The insulating-gate field effect transistor - A bipolar transistor in disguise," RCA Rev., vol. 34, no. 1, pp. 80-94, Mar. 1973.
-
(1973)
RCA Rev
, vol.34
, Issue.1
, pp. 80-94
-
-
Johnson, E.O.1
-
26
-
-
9744233646
-
Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits
-
Nov
-
D. Jimenez, B. Iniguez, J. Sune, and J. J. Saenz, "Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits," J. Appl. Phys., vol. 96, no. 9, pp. 5271-5276, Nov. 2004.
-
(2004)
J. Appl. Phys
, vol.96
, Issue.9
, pp. 5271-5276
-
-
Jimenez, D.1
Iniguez, B.2
Sune, J.3
Saenz, J.J.4
-
27
-
-
0038379115
-
SOI CMOS transistors for RF and microwave applications
-
Apr
-
D. Flandre, J. P. Raskin and D. Vanhoenacker, "SOI CMOS transistors for RF and microwave applications," Int. J. High Speed Electron. Syst. vol. 11, no. 4, pp. 1159-1248, Apr. 2001.
-
(2001)
Int. J. High Speed Electron. Syst
, vol.11
, Issue.4
, pp. 1159-1248
-
-
Flandre, D.1
Raskin, J.P.2
Vanhoenacker, D.3
-
28
-
-
23944519011
-
Device and technology evolution for Si-based RF integrated circuits
-
Jul
-
H. S. Bennett, R. Brederlow, J. C. Costa, P. E. Cottrell, W. M. Huang, A. A. Immorlica, Jr., J. E. Mueller, M. Racanelli, H. Shichijo, C.E. Weitzel, and B. Zhao, "Device and technology evolution for Si-based RF integrated circuits," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1235-1258, Jul. 2005.
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, Issue.7
, pp. 1235-1258
-
-
Bennett, H.S.1
Brederlow, R.2
Costa, J.C.3
Cottrell, P.E.4
Huang, W.M.5
Immorlica Jr., A.A.6
Mueller, J.E.7
Racanelli, M.8
Shichijo, H.9
Weitzel, C.E.10
Zhao, B.11
-
29
-
-
33846587988
-
Performance trends of Si-based RF transistors
-
F. Schwierz and C. Schippel, "Performance trends of Si-based RF transistors," Microelectron Reliab., vol. 47, no. 2/3, pp. 384-390, 2007.
-
(2007)
Microelectron Reliab
, vol.47
, Issue.2-3
, pp. 384-390
-
-
Schwierz, F.1
Schippel, C.2
|