New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs

IEEE International Conference on Microelectronic Test Structures

Volumn , Issue , 2008, Pages 160-165

  Fleury, Dominique ^a,b   Cros, Antoine ^a   Brut, Hugues ^a   Ghibaudot, Gérard ^b  

^a STMICROELECTRONICS   (France)

^b MINATEC   (France)

Author keywords

CMOS; Compact model; Electrical parameters; Low field drain current; MOSFET; Y function

Indexed keywords

CMOS; COMPACT MODEL; ELECTRICAL PARAMETERS; LOW FIELD DRAIN CURRENT; MOSFET; Y-FUNCTION;

MOSFET DEVICES;

EID: 51349147118     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMTS.2008.4509332     Document Type: Conference Paper

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