Novel extraction method for size-dependent mobility based on BSIM3-like compact model

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2424-2427

  Tanaka, Takuji ^a   Goto, Ken Ichi ^a   Nakamura, Ryou ^a   Satoh, Shigeo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

BSIM3; Halo implant; Low field mobility; Mechanical stress; MOSFET; Parasitic resistance

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; FUNCTIONS; MATHEMATICAL MODELS; NITRIDES; SILICON ON INSULATOR TECHNOLOGY;

BSIM3; HALO IMPLANT; LOW FIELD MOBILITY; MECHANICAL STRESS; PARASITIC RESISTANCE;

MOSFET DEVICES;

EID: 21244453121     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2424     Document Type: Conference Paper

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