-
1
-
-
0035804248
-
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
-
Duan X., Huang Y., Cui Y., Wang J., and Lieber C.M. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409 6816 (2001) 66-69
-
(2001)
Nature
, vol.409
, Issue.6816
, pp. 66-69
-
-
Duan, X.1
Huang, Y.2
Cui, Y.3
Wang, J.4
Lieber, C.M.5
-
2
-
-
33748593098
-
Nanowire electronic and optoelectronic devices
-
Li Y., Qian F., Xiang J., and Lieber C.M. Nanowire electronic and optoelectronic devices. Materials Today 9 10 (2006) 18-27
-
(2006)
Materials Today
, vol.9
, Issue.10
, pp. 18-27
-
-
Li, Y.1
Qian, F.2
Xiang, J.3
Lieber, C.M.4
-
3
-
-
0037459371
-
Small-diameter silicon nanowire surfaces
-
Ma D.D.D., Lee C.S., Au F.C.K., Tong S.Y., and Lee S.T. Small-diameter silicon nanowire surfaces. Science 299 5614 (2003) 1874-1877
-
(2003)
Science
, vol.299
, Issue.5614
, pp. 1874-1877
-
-
Ma, D.D.D.1
Lee, C.S.2
Au, F.C.K.3
Tong, S.Y.4
Lee, S.T.5
-
4
-
-
56549083690
-
Scaling of nanowire transistors
-
Yu B., Wang L., Yuan Y., Asbeck P.M., and Taur Y. Scaling of nanowire transistors. IEEE Transactions on Electron Devices 55 11 (2008) 2846-2858
-
(2008)
IEEE Transactions on Electron Devices
, vol.55
, Issue.11
, pp. 2846-2858
-
-
Yu, B.1
Wang, L.2
Yuan, Y.3
Asbeck, P.M.4
Taur, Y.5
-
5
-
-
0034291813
-
Nanoscale device modeling: the Green's function method
-
Datta S. Nanoscale device modeling: the Green's function method. Superlattices and Microstructures 28 4 (2000) 253-278
-
(2000)
Superlattices and Microstructures
, vol.28
, Issue.4
, pp. 253-278
-
-
Datta, S.1
-
6
-
-
18644369368
-
Simulating quantum transport in nanoscale transistors: real versus mode-space approaches
-
Venugopal R., Ren Z., Datta S., Lundstrom M.S., and Jovanovic D. Simulating quantum transport in nanoscale transistors: real versus mode-space approaches. Journal of Applied Physics 92 7 (2002) 3730-3739
-
(2002)
Journal of Applied Physics
, vol.92
, Issue.7
, pp. 3730-3739
-
-
Venugopal, R.1
Ren, Z.2
Datta, S.3
Lundstrom, M.S.4
Jovanovic, D.5
-
7
-
-
33748300947
-
Quantum transport in two- and three-dimensional nanoscale transistors: coupled mode effects in the nonequilibrium Green's function formalism
-
Luisier M., Schenk A., and Fichtner W. Quantum transport in two- and three-dimensional nanoscale transistors: coupled mode effects in the nonequilibrium Green's function formalism. Journal of Applied Physics 100 4 (2006) 043713
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.4
, pp. 043713
-
-
Luisier, M.1
Schenk, A.2
Fichtner, W.3
-
8
-
-
70049118997
-
Ballistic calculation of nonequilibrium Green function in nanoscale devices using finite element method
-
Kurniawan O., Bai P., and Li E. Ballistic calculation of nonequilibrium Green function in nanoscale devices using finite element method. Journal of Physics D: Applied Physics 42 (2009) 105109
-
(2009)
Journal of Physics D: Applied Physics
, vol.42
, pp. 105109
-
-
Kurniawan, O.1
Bai, P.2
Li, E.3
-
9
-
-
4344606224
-
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
-
Wang J., Polizzi E., and Lundstrom M. A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation. Journal of Applied Physics 96 4 (2004) 2192-2203
-
(2004)
Journal of Applied Physics
, vol.96
, Issue.4
, pp. 2192-2203
-
-
Wang, J.1
Polizzi, E.2
Lundstrom, M.3
-
10
-
-
35348984409
-
Coaxial silicon nanowires as solar cells and nanoelectronic power sources
-
Tian B., Zheng X., Kempa T.J., Fang Y., Yu N., Yu G., Huang J., and Lieber C.M. Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 449 7164 (2007) 885-889
-
(2007)
Nature
, vol.449
, Issue.7164
, pp. 885-889
-
-
Tian, B.1
Zheng, X.2
Kempa, T.J.3
Fang, Y.4
Yu, N.5
Yu, G.6
Huang, J.7
Lieber, C.M.8
-
11
-
-
34248140089
-
Zno nanowire uv photodetectors with high internal gain
-
Soci C., Zhang A., Xiang B., Dayeh S.A., Aplin D.P.R., Park J., Bao X.Y., Lo Y.H., and Wang D. Zno nanowire uv photodetectors with high internal gain. Nano Letters 7 4 (2007) 1003-1009
-
(2007)
Nano Letters
, vol.7
, Issue.4
, pp. 1003-1009
-
-
Soci, C.1
Zhang, A.2
Xiang, B.3
Dayeh, S.A.4
Aplin, D.P.R.5
Park, J.6
Bao, X.Y.7
Lo, Y.H.8
Wang, D.9
-
12
-
-
40449090496
-
Photovoltaic measurements in single-nanowire silicon solar cells
-
Kelzenberg M.D., Turner-Evans D.B., Kayes B.M., Filler M.A., Putnam M.C., Lewis N.S., and Atwater H.A. Photovoltaic measurements in single-nanowire silicon solar cells. Nano Letters 8 2 (2008) 710-714
-
(2008)
Nano Letters
, vol.8
, Issue.2
, pp. 710-714
-
-
Kelzenberg, M.D.1
Turner-Evans, D.B.2
Kayes, B.M.3
Filler, M.A.4
Putnam, M.C.5
Lewis, N.S.6
Atwater, H.A.7
-
13
-
-
17644426064
-
A new approach to the self-consistent solution of the Schrödinger-Poisson equations in nanowire MOSFETs
-
E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, A new approach to the self-consistent solution of the Schrödinger-Poisson equations in nanowire MOSFETs, in: Solid-State Device Research Conference, 2004. ESSDERC 2004. Proceeding of the 34th European, 2004, pp. 177-180.
-
(2004)
Solid-State Device Research Conference, 2004. ESSDERC 2004. Proceeding of the 34th European
, pp. 177-180
-
-
Gnani, E.1
Reggiani, S.2
Rudan, M.3
Baccarani, G.4
-
14
-
-
84943200652
-
Effects of the band-structure modification in silicon nanowires with small diameters
-
E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, Effects of the band-structure modification in silicon nanowires with small diameters, in: Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European, 2006, pp. 170-173.
-
(2006)
Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European
, pp. 170-173
-
-
Gnani, E.1
Reggiani, S.2
Rudan, M.3
Baccarani, G.4
-
15
-
-
44949249071
-
Bandstructure effects in silicon nanowire electron transport
-
Neophytou N., Paul A., Lundstrom M.S., and Klimeck G. Bandstructure effects in silicon nanowire electron transport. IEEE Transactions on Electron Devices 55 6 (2008) 1286-1297
-
(2008)
IEEE Transactions on Electron Devices
, vol.55
, Issue.6
, pp. 1286-1297
-
-
Neophytou, N.1
Paul, A.2
Lundstrom, M.S.3
Klimeck, G.4
-
16
-
-
33751237995
-
A numerical Schrödinger-Poisson solver for radially symmetric nanowire core-shell structures
-
Wang L., Wang D., and Asbeck P.M. A numerical Schrödinger-Poisson solver for radially symmetric nanowire core-shell structures. Solid-State Electronics 50 11-12 (2006) 1732-1739
-
(2006)
Solid-State Electronics
, vol.50
, Issue.11-12
, pp. 1732-1739
-
-
Wang, L.1
Wang, D.2
Asbeck, P.M.3
-
18
-
-
58149290193
-
Geometry dependent I-V characteristics of silicon nanowires
-
Ng M., Zhou L., Yang S., Shen L., and Tan V.B.C. Geometry dependent I-V characteristics of silicon nanowires. Nano Letters 8 11 (2008) 3662-3667
-
(2008)
Nano Letters
, vol.8
, Issue.11
, pp. 3662-3667
-
-
Ng, M.1
Zhou, L.2
Yang, S.3
Shen, L.4
Tan, V.B.C.5
-
19
-
-
33749158974
-
Effect of scattering and contacts on current and electrostatics in carbon nanotubes
-
10.1103/PhysRevB.72.085430
-
Svizhenko A., and Anantram M.P. Effect of scattering and contacts on current and electrostatics in carbon nanotubes. Physical Review B 72 8 (2005) 085430 10.1103/PhysRevB.72.085430
-
(2005)
Physical Review B
, vol.72
, Issue.8
, pp. 085430
-
-
Svizhenko, A.1
Anantram, M.P.2
-
20
-
-
11944274490
-
First-principles calculations of the electronic properties of silicon quantum wires
-
Read A.J., Needs R.J., Nash K.J., Canham L.T., Calcott P.D.J., and Qteish A. First-principles calculations of the electronic properties of silicon quantum wires. Physical Review Letters 69 8 (1992) 1232
-
(1992)
Physical Review Letters
, vol.69
, Issue.8
, pp. 1232
-
-
Read, A.J.1
Needs, R.J.2
Nash, K.J.3
Canham, L.T.4
Calcott, P.D.J.5
Qteish, A.6
-
21
-
-
23944454004
-
On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors
-
Wang J., Rahman A., Ghosh A., Klimeck G., and Lundstrom M. On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors. IEEE Transactions on Electron Devices 52 7 (2005) 1589-1595
-
(2005)
IEEE Transactions on Electron Devices
, vol.52
, Issue.7
, pp. 1589-1595
-
-
Wang, J.1
Rahman, A.2
Ghosh, A.3
Klimeck, G.4
Lundstrom, M.5
-
22
-
-
33947233244
-
Effect of growth orientation and surface roughness on electron transport in silicon nanowires
-
Svizhenko A., Leu P.W., and Cho K. Effect of growth orientation and surface roughness on electron transport in silicon nanowires. Physical Review B 75 (2007) 125417
-
(2007)
Physical Review B
, vol.75
, pp. 125417
-
-
Svizhenko, A.1
Leu, P.W.2
Cho, K.3
-
23
-
-
0041761616
-
Theory of ballistic nanotransistors
-
Rahman A., Guo J., Datta S., and Lundstrom M.S. Theory of ballistic nanotransistors. IEEE Transactions on Electron Devices 50 9 (2003) 1853-1864
-
(2003)
IEEE Transactions on Electron Devices
, vol.50
, Issue.9
, pp. 1853-1864
-
-
Rahman, A.1
Guo, J.2
Datta, S.3
Lundstrom, M.S.4
-
24
-
-
0036839486
-
A numerical study of ballistic transport in a nanoscale MOSFET
-
Rhew J.-H., Ren Z., and Lundstrom M.S. A numerical study of ballistic transport in a nanoscale MOSFET. Solid-State Electronics 46 11 (2002) 1899-1906
-
(2002)
Solid-State Electronics
, vol.46
, Issue.11
, pp. 1899-1906
-
-
Rhew, J.-H.1
Ren, Z.2
Lundstrom, M.S.3
-
25
-
-
0036253371
-
Essential physics of carrier transport in nanoscale MOSFETs
-
Lundstrom M., and Ren Z. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Transactions on Electron Devices 49 1 (2002) 133-141
-
(2002)
IEEE Transactions on Electron Devices
, vol.49
, Issue.1
, pp. 133-141
-
-
Lundstrom, M.1
Ren, Z.2
-
26
-
-
77649178937
-
-
M. Lundstrom, Device physics at the scaling limit: What matters?, Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, 2003, pp. 33.1.1-33.1.4.
-
M. Lundstrom, Device physics at the scaling limit: What matters?, Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International, 2003, pp. 33.1.1-33.1.4.
-
-
-
-
27
-
-
56549117612
-
Compact modeling of ballistic nanowire MOSFETs
-
Natori K. Compact modeling of ballistic nanowire MOSFETs. IEEE Transactions on Electron Devices 55 11 (2008) 2877-2885
-
(2008)
IEEE Transactions on Electron Devices
, vol.55
, Issue.11
, pp. 2877-2885
-
-
Natori, K.1
|