Effects of the band-structure modification in silicon nanowires with small diameters

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 170-173

  Gnani, E ^a   Reggiani, S ^a   Rudan, M ^a   Baccarani, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; SILICON; THRESHOLD VOLTAGE;

BAND APPROXIMATION; BINDING COMPUTATION; CYLINDRICAL NANOWIRE (CNW); QUANTUM-TRANSMITTING BOUNDARY METHOD (QTBM); TRANSPORT EFFECTIVE MASSES;

NANOWIRES;

EID: 84943200652     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307665     Document Type: Conference Paper

References (9)

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