Geometry dependent I-V characteristics of silicon nanowires

Nano Letters

Volumn 8, Issue 11, 2008, Pages 3662-3667

  Ng, Man Fai ^a   Shen, Lei ^a,b   Zhou, Liping ^c   Yang, Shuo Wang ^a   Tan, Vincent B C ^b  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; DIFFERENTIAL EQUATIONS; ELECTRIC WIRE; GREEN'S FUNCTION; HYDROGENATION; NANOWIRES;

CONDUCTING PROPERTIES; DENSITY FUNCTIONAL; EIGENCHANNEL; EXPERIMENTAL DATUM; GROWTH ORIENTATIONS; I-V CHARACTERISTICS; NON-EQUILIBRIUM GREEN'S FUNCTIONS; SILICON NANOWIRES; SMALL DIAMETERS; SURFACE CONDUCTING; SURFACE CONTACTS; SURFACE MODIFICATIONS; TRANSMISSION SPECTRUMS;

CURRENT VOLTAGE CHARACTERISTICS;

NANOWIRE; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; SPECTROSCOPY;

MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOWIRES; SILICON; SPECTRUM ANALYSIS;

EID: 58149290193     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl801668p     Document Type: Article

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