In-situ HCl etching and selective epitaxial growth of Boron-doped Ge for the formation of recessed and raised sources and drains

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 489-500

  Hartmann, J M ^a   Papon, A M ^a   Fabbri, J M ^a   Rolland, G ^a   Billon, T ^a   Juhel, M ^b   Halimaoui, A ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; ETCHING; GATES (TRANSISTOR); HYDROCHLORIC ACID; SILICON WAFERS;

DRAIN CURRENT; PATTERNED WAFERS; SOURCE CURRENT;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 33846972337     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355846     Document Type: Conference Paper

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