Silicon-on-insulator MOSFETs with hybrid crystal orientations

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 132-133

  Yang, M ^a   Chan, K ^a   Kumar, A ^a   Lo, S H ^a   Sleight, J ^a   Chang, L ^a   Rao, R ^a   Bedell, S ^a   Ray, A ^a   Ott, J ^a   Patel, J ^a   D'Emic, C ^a   Rubino, J ^a   Zhang, Y ^a   Shi, L ^a   Steen, S ^a   Sikorski, E ^a   Newbury, J ^a   Meyer, R ^a   To, B ^a   Kozlowski, P ^a   Graham, W ^a   Maurer, S ^a   Medd, S ^a   Canaperi, D ^a   Deligianni, L ^a   Tornello, J ^a   Gibson, G ^a   Dalton, T ^a   Ieong, M ^a   Shahidi, G ^a   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; OSCILLATORS (ELECTRONIC); SILICON; SILICON ON INSULATOR TECHNOLOGY; SURFACE PROPERTIES;

HYBRID ORIENTATION SUBSTRATES; RING OSCILLATORS; SURFACE ORIENTATION;

MOSFET DEVICES;

EID: 41149113484     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. Yang, et. al., IEDMTech. Dig., pp.453, (2003).
2. M. Yang, et. al., Symp. on VLSI Tech. Dig., pp160 (2004).
3. C. Sheraw, et. al., Symp. on VLSI Tech. Dig., pp 12 (2005).
4. G. Shahidi, IBM J. Res. & Dev., Vol. 46, pp 121, (2002).